Rhenium(I) complex as an electron acceptor in a photovoltaic device
Document Type
Letter to the Editor
Publication Date
4-25-2007
Abstract
An organic photovoltaic (PV) device with a structure of indium-tin-oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (20 nm)/4,4′,4′′-tris[3-methylphenyl (phenyl)amino]triphenylamine (m-MTDATA) (30 nm)/Re(CO)3Cl-monophenanthroline (Re-Phen) (60 nm)/LiF (1 nm)/Al (100 nm) has been fabricated. When the device was irradiated by 365 nm ultraviolet (UV) light, open circuit voltage (Voc) of 1.15 V, the short circuit current (Isc) of 100 μA/cm2, fill factor (FF) of 0.45 and power conversion efficiency of 4% were obtained, respectively. Spectroscopic investigation evidenced that the increase in the PV efficiency is related to the existence of a charge transfer absorption process. The generation mechanism of the PV effect was discussed. © 2006 Elsevier B.V. All rights reserved.
Publication Source (Journal or Book title)
Journal of Alloys and Compounds
Recommended Citation
Yue, S., Li, B., Fan, D., Hong, Z., & Li, W. (2007). Rhenium(I) complex as an electron acceptor in a photovoltaic device. Journal of Alloys and Compounds, 432 (1-2) https://doi.org/10.1016/j.jallcom.2006.06.012