X band MMIC power amplifier based on InGaP/GaAs HBT

Document Type

Article

Publication Date

5-1-2007

Abstract

An X band InGaP/GaAs HBT single stage MMIC power amplifier is reported. The self-aligning InGaP/GaAs HBT process was used to fabricate the circuit. The PA circuit is biased at the class AB state. The small signal S parameter test shows that at 8-8.5 GHz, the linear power gain is 8-9dB, VSWRin<2, and VSWRout<3. After optimizing the collector bias, the linear gain is improved to 9-10 dB. Under an 8.5 GHz CW signal power test with optimized loading conditions, the PIdB of the circuit is 29.4 dBm, relevant power gain is 7.2 dB, and relevant PAE is 42%. The Psat of the circuit is 30 dBm.

Publication Source (Journal or Book title)

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

First Page

759

Last Page

762

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