Effect of frequency of dynamic bias to total dose effect of X-rays

Authors

Yujuan He, China Electronic Product Reliability and Environmental Testing Research Institute
Qian Shi, China Electronic Product Reliability and Environmental Testing Research Institute
Hongwei Luo, China Electronic Product Reliability and Environmental Testing Research Institute
Yunfei En, China Electronic Product Reliability and Environmental Testing Research Institute
Xiaowen Zhang, China Electronic Product Reliability and Environmental Testing Research Institute
Bin Li, South China University of Technology
Yuan Liu, China Electronic Product Reliability and Environmental Testing Research Institute

Document Type

Article

Publication Date

1-1-2008

Abstract

Bias voltage applied to MOSFET during irradiation has a major impact on the device response because charge yield, transport, and trapping in oxide are all bias dependent. NMOSFET and PMOSFET under different frequency of dynamic bias were irradiated by 10 keV X-rays to study the total dose effect. The shifts of threshold voltage of the MOSFETs before and after irradiation and effects of the radiation-induced charge on the threshold voltage of MOSFETs are analyzed in this paper. The results showed that the higher the frequency of pulse signal is, the less threshold shift and concentration of the radiation-induced charge were observed at the same pulsed voltage.

Publication Source (Journal or Book title)

He Jishu/Nuclear Techniques

First Page

19

Last Page

22

Recommended Citation

He, Y., Shi, Q., Luo, H., En, Y., Zhang, X., Li, B., & Liu, Y. (2008). Effect of frequency of dynamic bias to total dose effect of X-rays. He Jishu/Nuclear Techniques, 31 (1), 19-22. Retrieved from https://repository.lsu.edu/ag_exst_pubs/750