A microstrip switch with isolation better than 95dB at Ku-band
Document Type
Article
Publication Date
10-1-2008
Abstract
This paper presents a microstrip switch using pin diodes for Ku-band applications. At high frequency, especially for millimeter-wave applications, it is hard to obtain a switch with high-isolation, so this paper makes an effort to develop isolation of the switch using a novel topology that contains multiple unit cells and optimizes parameters of the unit cell circuit. The isolation of the fabricated switch is better than 95dB from 15.75 to 16.25GHz, the insertion loss is less than 4dB, S11 is better than -12dB, S22 is better than -20dB, and the entire circuit size is only 34 mm × 11 mm × 5 mm.
Publication Source (Journal or Book title)
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
First Page
2034
Last Page
2037
Recommended Citation
Yuan, T., Chen, X., Chen, Z., Yao, X., Li, B., & Liu, X. (2008). A microstrip switch with isolation better than 95dB at Ku-band. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 29 (10), 2034-2037. Retrieved from https://repository.lsu.edu/ag_exst_pubs/699