A Ku band 30W pulsed microwave power amplifier module

Document Type

Article

Publication Date

11-1-2008

Abstract

This paper reports the design and performance of a pulsed microwave power amplifier module that uses microstrip lines and five-stage solid-state devices. A novel two-layer chamber structure is designed for the cancellation of crosstalk between low-frequency circuits and high-frequency circuits. A two-section bias circuit for the GaAs internally matched MESFETs is presented, with which the low-frequency oscillations can be suppressed effectively. When operating over 13.5~14.0GHz at a duty cycle of 10% with 3kHz pulse repetition frequency, the power amplifier module shows a power gain of Gp ≥ 44dB, an output pulsed peak power of Ppk ≥ 30W,and a total efficiency of η ≥ 13% (class A power amplification). ©2008 Chinese Institute of Electronics.

Publication Source (Journal or Book title)

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

First Page

2281

Last Page

2285

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