Optical properties and thermal stability of LaYbO 3 ternary oxide for high-k dielectric application
Document Type
Article
Publication Date
1-1-2011
Abstract
A new ternary rare oxide dielectric LaYbO 3 film had been prepared on silicon wafers and quartz substrates by reactive sputtering method using a La-Yb metal target. A range of analysis techniques was performed to determine the optical band gap, thermal stability, and electrical property of the deposited samples. It was found the band gap of LaYbO 3 film was about 5.8 eV. And the crystallization temperature for rapid thermal annealing (20 s) was between 900 and 950 °C. X-ray photoelectron spectroscopy results indicate the formation of the SiO 2 and silicate in the interface between silicon wafer and LaYbO 3 film. The dielectric constant is about 23 from the calculation of capacitance-voltage curve, which is comparable higher than previously reported La 2 O 3 or Yb 2 O 3 film. © 2010 Elsevier B.V. All rights reserved.
Publication Source (Journal or Book title)
Applied Surface Science
First Page
2526
Last Page
2530
Recommended Citation
Su, W., Yang, L., & Li, B. (2011). Optical properties and thermal stability of LaYbO 3 ternary oxide for high-k dielectric application. Applied Surface Science, 257 (7), 2526-2530. https://doi.org/10.1016/j.apsusc.2010.10.016