Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs
Document Type
Article
Publication Date
1-1-2011
Abstract
This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and drain-induced barrier-lowering of CMOS-based devices in nanometre scale. © 2011 Chinese Physical Society and IOP Publishing Ltd.
Publication Source (Journal or Book title)
Chinese Physics B
Recommended Citation
Liu, H., Li, J., Li, B., Cao, L., & Yuan, B. (2011). Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs. Chinese Physics B, 20 (1) https://doi.org/10.1088/1674-1056/20/1/017301