A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs
Document Type
Article
Publication Date
4-1-2011
Abstract
On the basis of the exact resultant solution of two dimensional Poisson's equations, a new accurate two-dimensional analytical model comprising surface channel potentials, a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator. Besides offering a physical insight into device physics, the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs. © 2011 Chinese Institute of Electronics.
Publication Source (Journal or Book title)
Journal of Semiconductors
Recommended Citation
Li, J., Liu, H., Yuan, B., Cao, L., & Li, B. (2011). A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs. Journal of Semiconductors, 32 (4) https://doi.org/10.1088/1674-4926/32/4/044005