Low-voltage, high-efficiency nondoped phosphorescent organic light-emitting devices with double-quantum-well structure

Authors

Shumei Liu, Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Bin Li, Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Liming Zhang, Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Shumei Yue, Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences

Document Type

Article

Publication Date

4-18-2011

Abstract

Low-voltage and high-efficiency nondoped phosphorescent organic light-emitting devices are fabricated by introducing a simple triplet double-quantum-well structure with an Ir(III) complex as potential well layer (PWL) and emitting layer (EML). The effects of various potential barrier layer (PBL) on device performances are discussed. Remarkably, the device with 1,3,5-tris(N-phenyl-benzimidazol-2-yl)benzene (TPBi) as PBL shows a low turn-on voltage of 2.30 V, a maximum power efficiency of 30.5 lm/W at 2.65 V and 24.5 lm/W with 1000 cd/ m2 at 3.75 V. We attribute these to the efficient carrier/exciton confinement function of TPBi and the improvement of carrier injection/balance in PWL/EML by self-balancing effect. © 2011 American Institute of Physics.

Publication Source (Journal or Book title)

Applied Physics Letters

Recommended Citation

Liu, S., Li, B., Zhang, L., & Yue, S. (2011). Low-voltage, high-efficiency nondoped phosphorescent organic light-emitting devices with double-quantum-well structure. Applied Physics Letters, 98 (16) https://doi.org/10.1063/1.3581216