An analytic model for electron mobility in strained Si/Si1-xGex nMOSFETs

Document Type

Conference Proceeding

Publication Date

9-28-2011

Abstract

In order to describe electron transport properties in inversion layer of strained Si/Si1-xGex nMOSFETs, a new analytic electron mobility model is proposed. The model not only takes into account the effect of germanium(Ge) content x on phonon scattering-limited mobility and surface roughness-limited mobility, and but also includes the degradation effect of strained Si film thickness and temperature on the device mobility. For various Ge content x and a wide range of normal electric field, temperature and strained Si film thickness, the model provides good agreement with the experimental data in references. In addition, the model can be expressed using the analytical expression and can be easily included in the device simulator. © (2011) Trans Tech Publications.

Publication Source (Journal or Book title)

Advanced Materials Research

First Page

1168

Last Page

1171

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