Band alignment and atom segregation of LaYbO 3 films on silicon

Document Type

Article

Publication Date

4-1-2012

Abstract

Ternary rare earth oxides are expected to be more promising high-k dielectric materials than conventional binary rare earth oxides due to higher band gap, higher permittivity and good interfacial stability. In the present study, the band alignment and atom thermal diffusion of LaYbO 3, a new ternary rare earth oxide, are studied by X-ray photoelectron spectrum (XPS) and angle-resolved XPS, respectively. The band gap value for LaYbO 3 crystalline film rises to 6.7 eV compared with 6.2 eV for amorphous film. Valence (ΔE v) and conduction band (ΔE c) offset are ΔE v = 3.5 eV, ΔE c = 1.6 eV for the amorphous film and ΔE v = 3.3 eV, ΔE c = 2.3 eV for the crystalline film. From elemental depth profile through high-k layer and silicon substrate, it is shown that La atom tends to diffuse into silicon substrate and piles up at oxide/silicon interface at high annealing temperature ∼1000°C. © 2012 World Scientific Publishing Company.

Publication Source (Journal or Book title)

Surface Review and Letters

This document is currently not available here.

Share

COinS