Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode
Document Type
Article
Publication Date
2-1-2013
Abstract
The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V and emits UV light upon putting a forward bias. The intensity of the UV emission increases as injection current increases from 0.5 to 3.5 mA, but the wavelength of the UV emission decreases from 404 to 387 nm. It is demonstrated that the UV emission comes from near band-edge radiative recombination of electron and hole in the ZnO layer. The mechanism of the UV electroluminescence is discussed in the present work. © 2012 Elsevier B.V. All rights reserved.
Publication Source (Journal or Book title)
Journal of Luminescence
First Page
240
Last Page
243
Recommended Citation
Deng, R., Yao, B., Li, Y., Xu, Y., Li, J., Li, B., Zhang, Z., Zhang, L., Zhao, H., & Shen, D. (2013). Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode. Journal of Luminescence, 134, 240-243. https://doi.org/10.1016/j.jlumin.2012.08.039