Harmonie and two-tone intermodulation distortion analyses of the inverted InGaAs/InAlAs/InP HBT

Document Type

Article

Publication Date

12-1-1997

Abstract

Harmonic and two-tone intermodulation distortion analyses of the InGaAs/InAIAs/InP collector-up heterojunction bipolar transistor (HBT) are performed by a simple Ebers-Moll model. The parasitic elements of the equivalent circuit are extracted at zero bias by numerical optimization. A semianalytical approach is used to extract the intrinsic parameters of the small-signal equivalent circuit at nonzero bias points. Appropriate equations given by device physics are fitted to the bias variation of intrinsic parameters so that the Ebers-Moll model parameters can be extracted. Agreement between simulation and measurement of harmonic and intermodulation distortion is achieved. © 1997 IEEE.

Publication Source (Journal or Book title)

IEEE Transactions on Microwave Theory and Techniques

First Page

1135

Last Page

1137

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