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The mean-field theory for disordered electron systems without interaction is widely and successfully used to describe equilibrium properties of materials over the whole range of disorder strengths. However, it fails to take into account the effects of quantum coherence and information of localization. Vertex corrections due to multiple backscatterings may drive the electrical conductivity to zero and make expansions around the mean field in strong disorder problematic. Here, we present a method for the calculation of two-particle quantities which enables us to characterize the metal-insulator transitions in disordered electron systems by using the typical medium dynamical cluster approximation. We show how to include vertex corrections and information about the mobility edge in the typical mean-field theory. We successfully demonstrate the application of the developed method by showing that the conductivity formulated in this way properly characterizes the metal-insulator transition in disordered systems.

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Physical Review B