Document Type
Conference Proceeding
Publication Date
5-15-2011
Abstract
Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small bandgap (Eg 0.2 eV), a carrier density of ∼1018 cm-3, and a large n-type Seebeck coefficient (S ∼ - 400 V/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (∼- 150 μV/K). The largest power factor (S 2/p= 62 μW/m K2) was observed for Fe 0.99Co0.01(Ga0.997Ge0.003) 3, and its corresponding figure of merit (ZT= 1.3 ×10 -2) at 390 K improved by over a factor of 5 from the pure material. © 2011 American Institute of Physics.
Publication Source (Journal or Book title)
Journal of Applied Physics
Recommended Citation
Haldolaarachchige, N., Karki, A., Phelan, W., Xiong, Y., Jin, R., Chan, J., Stadler, S., & Young, D. (2011). Effect of chemical doping on the thermoelectric properties of FeGa 3. Journal of Applied Physics, 109 (10) https://doi.org/10.1063/1.3585843