Title

Memory-function approach to ellipticity and Faraday rotation in a metal-oxide-semiconductor system

Document Type

Article

Publication Date

1-1-1983

Abstract

We use the memory-function approach to calculate the ellipticity and Faraday rotation due to the two-dimensional electron gas at the oxide-semiconductor interface of a metal-oxide-semiconductor system. Experimentally determined memory-function values of Allen et al., as a function of the photon frequency, are used in our analysis. For the corresponding results with varying external magnetic field B we have used the theoretical results of Ting et al. for the memory function. Comparison is also made with the recently reported experimental results of Piller and Wagner. © 1983 The American Physical Society.

Publication Source (Journal or Book title)

Physical Review B

First Page

4643

Last Page

4646

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