Charge fluctuations and zero-bias resistance in small-capacitance tunnel junctions
Document Type
Article
Publication Date
1-1-1992
Abstract
The zero-bias resistance in small capacitance tunnel junctions was recently measured by Cleland, Schmidt, and Clarke and these authors used a quantum Langevin model to explain the data [Phys. Rev. B 45, 2950 (1992)]. Their model takes into account Nyquist noise generated in the leads but here we extend it to include all sources of Nyquist noise with emphasis on the noise generated in the junction itself. This enables us to get better agreement with the experimental data, particularly for junctions with high tunnel resistance and high lead resistance. © 1992 The American Physical Society.
Publication Source (Journal or Book title)
Physical Review B
First Page
14219
Last Page
14222
Recommended Citation
Hu, G., & O'Connell, R. (1992). Charge fluctuations and zero-bias resistance in small-capacitance tunnel junctions. Physical Review B, 46 (21), 14219-14222. https://doi.org/10.1103/PhysRevB.46.14219