High magnetic field sensor using LaSb2

Authors

D. P. Young, Louisiana State University
R. G. Goodrich, Louisiana State University
J. F. DiTusa, Louisiana State University
S. Guo, Louisiana State University
P. W. Adams, Louisiana State University
Julia Y. Chan, Louisiana State University
Donavan Hall, National High Magnetic Field Laboratory

Document Type

Article

Publication Date

5-26-2003

Abstract

A report on the magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 is presented. It is found that below 10 K the perpendicular magnetoresistance of LaSb2becomes temperature independent. LaSb2 is characterized by a 100-fold linear increase in resistance between 0 and 45 T.

Publication Source (Journal or Book title)

Applied Physics Letters

First Page

3713

Last Page

3715

Recommended Citation

Young, D., Goodrich, R., DiTusa, J., Guo, S., Adams, P., Chan, J., & Hall, D. (2003). High magnetic field sensor using LaSb2. Applied Physics Letters, 82 (21), 3713-3715. https://doi.org/10.1063/1.1577390