A self-similar solution for the growth rate of a compound layer in thin-film binary diffusion couples
Document Type
Article
Publication Date
12-1-2000
Abstract
The diffusion controlled growth of a compound phase AnB between two thin films of material A and B is studied with the nonlinear Kirkendall effect included. Previous models of the growth rate do not solve the diffusion equation, and thus do not fully utilize the predictive capability. This paper describes a self-similar transformation that reduces the nonlinear, timedependent diffusion equation with two free boundaries into a nonlinear ordinary differential equation, which is solved numerically by a shooting method. It is found that the intrinsic diffusion coefficients of A and B in AnB can be determined from the positions of the interfaces without using the concentration profile. This provides a simpler method for measuring intrinsic diffusion coefficients. © 2000 Materials Research Society.
Publication Source (Journal or Book title)
Materials Research Society Symposium - Proceedings
First Page
309
Last Page
314
Recommended Citation
Zhang, H., & Wong, H. (2000). A self-similar solution for the growth rate of a compound layer in thin-film binary diffusion couples. Materials Research Society Symposium - Proceedings, 580, 309-314. Retrieved from https://repository.lsu.edu/mechanical_engineering_pubs/2315