Document Type
Article
Publication Date
4-8-2007
Abstract
We have printed dense line/space patterns with half-pitches as small as 12.5 nm in a negative-tone calixarene resist using extreme ultraviolet (EUV) interference lithography. The EUV interference setup which is based on transmission diffraction gratings is illuminated with spatially coherent radiation from a synchrotron source. The results show the extendibility of EUV lithography to printing features measuring less than 15 nm in size. We discuss the potential impact of effects such as photoelectron blur and shot noise in high-resolution EUV lithography. © 2007 American Vacuum Society.
Publication Source (Journal or Book title)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
First Page
91
Last Page
95
Recommended Citation
Solak, H., Ekinci, Y., Käser, P., & Park, S. (2007). Photon-beam lithography reaches 12.5 nm half-pitch resolution. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25 (1), 91-95. https://doi.org/10.1116/1.2401612