Eutectic bonding of Al-based high aspect ratio microscale structures

Document Type

Article

Publication Date

4-1-2007

Abstract

Metal-based microelectromechanical systems (MEMS) have important advantages over Si-based MEMS. To form any functional metal-based microdevice from metallic high-aspect-ratio microscale structures (HARMS), proper assembly and packaging are required. In this paper, we report successful eutectic bonding of Al-based HARMS using Al-Ge intermediate layers. A series of Al-Ge composite thin films were vapor deposited. Their composition and micro-/nano-scale structure were characterized. The morphology of bonded Al structures was examined, including the morphology of separated surfaces. © Springer-Verlag 2007.

Publication Source (Journal or Book title)

Microsystem Technologies

First Page

723

Last Page

730

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