Microstructural characteristic of vapor-phase sputter co-deposited Al-Ge nanocomposite thin films
Document Type
Article
Publication Date
5-31-2010
Abstract
A series of Al-Ge thin films, with varying overall compositions, were codeposited in a radio frequency inductively coupled plasma assisted hybrid chemical/physical vapor deposition system. Detailed compositional and structural characterization of sputter co-deposited Al-Ge thin films was carried out using X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM). Ge crystallization and Al-Ge phase separation in as-deposited Al-Ge thin films were studied by high-resolution TEM. The present study reveals some details regarding the process of Al-Ge phase separation during thin film deposition. © 2010 Elsevier B.V. All rights reserved.
Publication Source (Journal or Book title)
Thin Solid Films
First Page
4299
Last Page
4303
Recommended Citation
Mei, F., & Meng, W. (2010). Microstructural characteristic of vapor-phase sputter co-deposited Al-Ge nanocomposite thin films. Thin Solid Films, 518 (15), 4299-4303. https://doi.org/10.1016/j.tsf.2010.01.012