A Low Power MoS2TFET-Based Op-amp Design for Computational Circuits

Document Type

Conference Proceeding

Publication Date

1-1-2021

Abstract

Tunnel field effect transistor (TFET) is rapidly replacing MOSFETs in low power designs and applications. This is due to high leakage power that engendered from scaling down CMOS transistors. TFETs also have sharp subthreshold slopes (SS) and can be operated with low supply voltage. In this work, the compact models of MoS2 TFET are presented and the I-V characteristics of both n and p-type transistors are extracted. The models demonstrate excellent high Ion/Ioff ratio of 5.29×107 and 6.09×107 for both n-TFET and p-TFET, respectively. Using the TFET models, a two-stage operational amplifier is designed and simulated in Cadence/Spectre. The results show that the op-amp has a DC gain of 16.3 dB, the cut-off frequency is 30.2 MHz, and the gain-bandwidth product is 0.13 GHz. Similarly, the gain and phase margins are 8.01 dB and 67.6°, respectively, and it consumes only 35.96 µW power. In addition, we obtained the common mode rejection ratio of 83.2 dB which shows that the designed op-amp is very good at rejecting interference or common mode signals.

Publication Source (Journal or Book title)

2021 IEEE 12th Annual Information Technology, Electronics and Mobile Communication Conference, IEMCON 2021

First Page

731

Last Page

736

This document is currently not available here.

Share

COinS