OFDM performance analysis in the presence of synchronization errors induced by hot carriers

Document Type

Conference Proceeding

Publication Date

1-1-2005

Abstract

Phase noise may be regarded as the most severe cause of performance degradation in OFDM systems. Hot-carriers (HCs), found in the CMOS synchronization circuits, are highmobility charge carriers that degrade the MOSFET devices' performance by increasing the threshold voltage required to operate the MOSFETs. The HC effect manifests itself as the phase noise, which increases with the continued MOSFET operation and results in the performance degradation of the Voltage-Controlled Oscillator (VCO) built on the MOSFET. The HC effect is particularly evident in the short-channel MOSFET devices. The MOSFET instability will impact on the OFDM system performance. The relationship between the OFDM system performance and the hot-carrier effect can be analyzed in terms of a crucial parameter, the threshold voltage. In this paper, we adopt the phase noise model for double-ended ring oscillators, and derive a sensitivity function which can provide insights into the expected OFDM system performance for the system design engineers. The expected OFDM performance degradation due to the hot carrier effect is also provided through our simulations.

Publication Source (Journal or Book title)

IEEE Vehicular Technology Conference

First Page

1844

Last Page

1848

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