Hot-electron-induced effects on noise and jitter in submicron CMOS phase-locked loop circuits
Document Type
Conference Proceeding
Publication Date
12-1-2005
Abstract
In this paper, the hot-electron-induced degradation in voltage-controlled oscillator (VCO) is investigated. A current starved VCO is designed in 0.25 μm CMOS process to verify the VCO gain degradation due to hot-carrier effects. The loop dynamics, phase noise and output clock jitter of a second order PLL are studied. The loop parameters, i.e., damping factor and natural frequency, phase noise and jitter degradations due to VCO degradation are analyzed, considering hot-carrier effects. After four hours stress, there is a 23% decrease in the damping factor and natural frequency, also l dB increase in phase noise and 17% increase in output RMS jitter. © 2005 IEEE.
Publication Source (Journal or Book title)
Midwest Symposium on Circuits and Systems
First Page
507
Last Page
510
Recommended Citation
Zhang, C., Srivastava, A., & Wu, H. (2005). Hot-electron-induced effects on noise and jitter in submicron CMOS phase-locked loop circuits. Midwest Symposium on Circuits and Systems, 2005, 507-510. https://doi.org/10.1109/MWSCAS.2005.1594149