Effect of well width variation on type-I/type-II photoluminescence in GaAs/AlAs single quantum wells
We have investigated type-I/type-II transitions in MBE-grown 20, 35, and 50 Å GaAs/AlAs single quantum wells using photoluminescence (PL) spectroscopy. The 20 and 50 Å wells show a type-I peak, while the 35 Å well has PL peaks corresponding to both type-I and type-II transitions. Peak assignment for the 35 Å-well sample is based upon excitation intensity dependent measurements, and the strength of the type-II transition in this sample is attributed to Γ-X mixing. Superperiodicity has been put forth as a possible explanation for Γ-X mixing effects in superlattice structures, but the observation of this phenomenon in a single quantum well structure suggests that superperiodicity is not required for Γ-X mixing to occur. © 1997 Academic Press Limited.
Publication Source (Journal or Book title)
Superlattices and Microstructures
Blue, L., Daniels-Race, T., Yeh, C., & McNeil, L. (1997). Effect of well width variation on type-I/type-II photoluminescence in GaAs/AlAs single quantum wells. Superlattices and Microstructures, 21 (2), 187-193. https://doi.org/10.1006/spmi.1995.0162