We have measured the electrical resistivity, the magnetoresistance, the Hall effect, and the magnetization in varying temperature ranges between 0.3 and 300 K on single crystals of (Formula presented) and (Formula presented) The ferromagnetic phase transition of (Formula presented) marked by a sharp peak in the temperature dependence of the electrical resistivity (Formula presented) just below 16 K, is shown to be accompanied by a considerable increase of the effective charge carrier concentration (Formula presented) The overall features of the transport properties of (Formula presented) are similar to those of (Formula presented) A phase transition at 5.3 K has been established. However, the increase of (Formula presented) across this phase transition by two orders of magnitude is much more pronounced than in pure (Formula presented). © 2000 The American Physical Society.
Publication Source (Journal or Book title)
Physical Review B - Condensed Matter and Materials Physics
Paschen, S., Pushin, D., Schlatter, M., Vonlanthen, P., Ott, H., Young, D., & Fisk, Z. (2000). Electronic transport. Physical Review B - Condensed Matter and Materials Physics, 61 (6), 4174-4180. https://doi.org/10.1103/PhysRevB.61.4174