Temperature dependence of inductively coupled plasma assisted growth of TiN thin films
Document Type
Conference Proceeding
Publication Date
11-1-1999
Abstract
The use of low pressure high density plasmas to assist the synthesis of ceramic thin film materials is in its infancy. Using an inductively coupled plasma assisted magnetron sputtering system, we examine the dependence of plasma-assisted growth of TiN thin films on growth temperature at different ratios of ion flux to neutral atom flux. Our results indicate that a temperature independent densification of TiN films occurs above a certain ion to neutral atom flux ratio. As an example of this temperature independent densification, we demonstrate the formation of dense B1 TiN crystalline thin films at growth temperatures down to ~ 100 K.
Publication Source (Journal or Book title)
Surface and Coatings Technology
First Page
206
Last Page
212
Recommended Citation
Meng, W., Curtis, T., Rehn, L., & Baldo, P. (1999). Temperature dependence of inductively coupled plasma assisted growth of TiN thin films. Surface and Coatings Technology, 120-121, 206-212. https://doi.org/10.1016/S0257-8972(99)00457-0