Deposition of highly hydrogenated carbon films by a modified plasma assisted chemical vapor deposition technique
Document Type
Article
Publication Date
11-21-2005
Abstract
Highly hydrogenated carbon films, with hydrogen content approaching 60 at.%, were deposited with a modified, inductively coupled plasma (ICP) assisted, chemical vapor deposition (CVD) technique. During deposition, flux of ionic species to the substrate surface was reduced by inserting a glass tube-grounded wire-mesh screen assembly between a CH4/Ar ICP and the substrate. Film characterization was accomplished by combining hydrogen elastic recoil detection, Raman spectroscopy, and instrumented nanoindentation. Film thermal stability was studied through high-temperature annealing in vacuum. We suggest that a decreased ratio of ionic to activated neutral species flux to the substrate during deposition is responsible for the increased hydrogen incorporation. © 2005 Elsevier B.V. All rights reserved.
Publication Source (Journal or Book title)
Surface and Coatings Technology
First Page
1543
Last Page
1548
Recommended Citation
Shi, B., Meng, W., Evans, R., & Hershkowitz, N. (2005). Deposition of highly hydrogenated carbon films by a modified plasma assisted chemical vapor deposition technique. Surface and Coatings Technology, 200 (5-6), 1543-1548. https://doi.org/10.1016/j.surfcoat.2005.08.098