Effect of ZnO Interfacial Seed Layer in Sol-Gel Grown ZnMgO Ferroelectric
Document Type
Article
Publication Date
12-24-2024
Abstract
High remanent polarization observed in ferroelectric ZnMgO shows promise for ferroelectric memory devices made of low-cost, earth-abundant materials and is capable of a large memory window. To address the low performance of devices fabricated using low-cost sol-gel processing, an interfacial-structure-based approach to improve crystallinity in ZnMgO thin films was chosen. In this study, we demonstrate an increase of 182% in achievable remanent polarization coinciding with higher crystallinity and a larger ratio of ferroelectric wurtzite phase in sol-gel deposited Zn1-xMgxO (x = 0.35) films grown on an interfacial ZnO seed layer, through characterization of ferroelectric behavior via piezoresponse force microscopy and positive-up-negative-down measurements. Although the interfacial structure is not preserved after annealing, an improved remanent polarization of 0.699 μC/cm2 at a coercive field of 1 MV/cm is achieved in a sol-gel ZnMgO thin film through the addition of a ZnO buffer during processing.
Publication Source (Journal or Book title)
ACS Applied Electronic Materials
First Page
8703
Last Page
8709
Recommended Citation
Dalba, D., Zhang, X., Xu, W., Bhattarai, B., Gamachchi, D., Karunarathne, I., Meng, W., & Meng, A. (2024). Effect of ZnO Interfacial Seed Layer in Sol-Gel Grown ZnMgO Ferroelectric. ACS Applied Electronic Materials, 6 (12), 8703-8709. https://doi.org/10.1021/acsaelm.4c00281