Photoluminescence study of highly doped, tensile-strained GaAs/In0.07Al0.93As quantum wells
A photoluminescence study of highly doped tensile-strained GaAs quantum wells is made to investigate the feasibility of achieving polarization-independent photodetection. A simulation procedure to predict the photoluminescence peaks is also developed which shows good agreement with the experimental results. A primitive structure for achieving polarization-independent photodetection is also proposed. © 1997 John Wiley & Sons, Inc.
Publication Source (Journal or Book title)
Microwave and Optical Technology Letters
Balan, V., Daniels-Race, T., & McNeil, L. (1997). Photoluminescence study of highly doped, tensile-strained GaAs/In0.07Al0.93As quantum wells. Microwave and Optical Technology Letters, 16 (1), 7-11. https://doi.org/10.1002/(SICI)1098-2760(199709)16:1<7::AID-MOP3>3.0.CO;2-H