Growth Kinetics of CVD TiO2: Influence of Carrier Gas

Document Type

Article

Publication Date

1-1-1990

Abstract

We have measured the growth rate of TiO2 thin films deposited by the decomposition of titanium tetraisopropoxide (TTIP) in the presence of N2 carrier gas. Experiments are performed at TTIP partial pressures between 0,005 and 0.7 torr and a substrate temperature of 573 K, conditions where second-order kinetics have previously been observed in the presence of TTIP alone. When 5 torr of N2 is present as a carrier gas, the kinetics become first order in TTIP concentration. By fitting the observed rates to the rate expression for the bimolecular reaction mechanism proposed in the earlier study, we obtain a value of ϕ = 0.43 for the relative efficiency of N2 for collisional energy transfer, compared to TTIP. © 1990, The Electrochemical Society, Inc. All rights reserved.

Publication Source (Journal or Book title)

Journal of the Electrochemical Society

First Page

1206

Last Page

1208

This document is currently not available here.

Share

COinS