Gas-phase kinetics for TiO2 CVD: hot-wall reactor results

Document Type

Article

Publication Date

7-1-1995

Abstract

We have studied the growth kinetics of TiO2 chemical vapor deposition using the decomposition of Ti(i-OC3H7)4 (TTIP, titanium tetra-isopropoxide) in a hot-wall, axial flow low-pressure chemical vapor deposition reactor. Under conditions of high reactant conversion, we obtain polycrystalline, fully dense anatase TiO2 films at growth rates up to 0.2 μm h-1. The kinetic results (i.e., measured growth rates and axial film-thickness profiles) are analyzed using a two-dimensional reactor transport model and the gas-phase reaction mechanism that we proposed previously. This analysis yields a value for the rate constant of the gas-phase activation step (k1 [cm3 mole-1 s-1]= 4.0 × 1011 exp(-40 [kJ mole-1]/RT) that is consistent with the value obtained from our earlier kinetic experiments performed using a cold-wall, impinging flow reactor. In particular, the present results confirm the seemingly low value for the activation energy of the proposed gas-phase activation step obtained in our earlier work. © 1995.

Publication Source (Journal or Book title)

Thin Solid Films

First Page

65

Last Page

71

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