Kinetics of copper CVD using solution delivery of Cu (hfac) 2 and isopropanol

Document Type

Article

Publication Date

2-13-2006

Abstract

We have measured the growth kinetics and film properties for copper chemical vapor deposition (CVD) using Cu (hfac)2 dissolved in isopropanol as the precursor delivery method. Growth rates are similar to those reported using reactant evaporation as the delivery method, despite operating with a much lower partial pressure of Cu (hfac)2 in the reactor. The reaction kinetics are first-order with respect to precursor partial pressure and zero-order with respect to isopropanol. Film morphology suggests that growth occurs via three-dimensional cluster formation (i.e., a Volmer-Weber process). Resistivity deviates above the bulk value for films thinner than 0.1 μm and may be attributed mainly to electron scattering from surface roughness. We propose a minimal parameter series reaction mechanism that can account for the present kinetic behavior, as well as previous results using higher precursor partial pressure. © 2006 The Electrochemical Society. All rights reserved.

Publication Source (Journal or Book title)

Journal of the Electrochemical Society

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