Nickel monosilicide contact formation in electrolessly etched silicon nanowires deposited onto nickel electrodes
Document Type
Article
Publication Date
6-1-2009
Abstract
Large arrays of silicon nanowires are fabricated by electroless etching of (100) p-type silicon wafers: The nanowires are separated from substrates, deposited onto interdigitated nickel electrodes, and annealed to form silicide contacts. Two-probe electrical characterization of interdigitated electrodes with hundreds of silicided nanowires deposited across electrode pairs shows a linear current-voltage behavior with an estimated nanowire resistivity approximately equal to the parent wafer. Results from X-ray photoelectron spectroscopy and X-ray absorption near-edge structure show the formation of a nickel monosilicide (NiSi) phase near the tips of nanowires adjacent to nickel reservoirs during an anneal. The work shows that a facile and nonvacuum process may be used to create ohmic contacts between high volumes of nanowires and pre-existing electrodes. © 2009 The Electrochemical Society.
Publication Source (Journal or Book title)
Journal of the Electrochemical Society
Recommended Citation
Xu, W., Palshin, V., & Flake, J. (2009). Nickel monosilicide contact formation in electrolessly etched silicon nanowires deposited onto nickel electrodes. Journal of the Electrochemical Society, 156 (7) https://doi.org/10.1149/1.3122703